NX1029X/SOT666/SOT6 NX1029XH
The pictures are for reference only
Description:
NX1029X/SOT666/SOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
N and P Channel Complementary type
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
1.6Ω @ 500mA,10V,7.5Ω @ 100mA,10V
Vgs (th) (maximum) for different Ids
DataSheet
NX1029XH(FET, MOSFET)ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15415,Price reference "real-time change" China/Hongkong。 NX1029XH package/specs, Download NX1029XH、Datasheet。