PMGD8000LN,115 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

NXP

Model:

PMGD8000LN,115

Description:

MOSFET 2N-CH 30V 0.125A 6TSSOP

Stock:

28398

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

125mA

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

0.35nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

18.5pF @ 5V

On resistance (maximum) for different Ids and Vgs

8 Ω @ 10mA,4V

Power - maximum

200mW

Vgs (th) (maximum) for different Ids

1.5V @ 100µA

packing

TR,CT

series

TrenchMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

PMGD8000LN,115（FET, MOSFET）ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28398,Price reference "real-time change" China/Hongkong。 PMGD8000LN,115 package/specs, Download PMGD8000LN,115、Datasheet。