PMWD19UN,518 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

NXP

Model:

PMWD19UN,518

Description:

MOSFET 2N-CH 30V 5.6A 8TSSOP

Stock:

1255

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

5.6A

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

28nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

1478pF @ 10V

On resistance (maximum) for different Ids and Vgs

23 mΩ @ 3.5A,4.5V

Power - maximum

2.3W

Vgs (th) (maximum) for different Ids

700mV @ 1mA

packing

TR,CT

series

TrenchMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-TSSOP(0.173,4.40mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

PMWD19UN,518（FET, MOSFET）ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1255,Price reference "real-time change" China/Hongkong。 PMWD19UN,518 package/specs, Download PMWD19UN,518、Datasheet。