MOSFET 2N-CH 20V 0.7A SOT-363 FDG6335N
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Description:
MOSFET 2N-CH 20V 0.7A SOT-363
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
FDG6335N(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory682,Price reference "real-time change" China/Hongkong。 FDG6335N package/specs, Download FDG6335N、Datasheet。