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    Home/    Category/    FET, MOSFET/    FDMD8280

    MOSFET 2N-CH 80V 11A 12POWER FDMD8280

    FDMD8280 image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FDMD8280
    Description:
    MOSFET 2N-CH 80V 11A 12POWER
    Stock:
    4964
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.63
    The market price fluctuates. Please consult the customer service for the actual price
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    11A
  • Drain source voltage (Vdss)
    80V
  • FET Type
    2 N-channels(two)
  • FET function
    standard
  • Gate charge (Qg) at different Vgs (maximum)
    44nC @ 10V
  • Input capacitance at different Vds (Ciss) (maximum)
    3050pF @ 40V
  • On resistance (maximum) for different Ids and Vgs
    8.2 mΩ @ 11A,10V
  • Power - maximum
    1W
  • Vgs (th) (maximum) for different Ids
    4V @ 250µA
  • packing
    TR,CT
  • series
    PowerTrench®
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    12-PowerWDFN
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    FDMD8280（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4964,Price reference "real-time change" China/Hongkong。 FDMD8280 package/specs, Download FDMD8280、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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