EFC2K102NUZTDG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

EFC2K102NUZTDG

Description:

DUAL N-CHANNEL POWER MOSFET 12V

Stock:

32361

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0

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Parameters

Current at 25 ° C - continuous drain (Id)

33A(Ta)

Drain source voltage (Vdss)

12V

FET Type

2 N Channel(two)Co leakage

FET function

Logic level gate,2.5V drive

Gate charge (Qg) at different Vgs (maximum)

42nC @ 3.8V

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

2.65 mΩ @ 5A,4.5V

Power - maximum

3.1W(Ta)

Vgs (th) (maximum) for different Ids

1.3V @ 1mA

packing

TR,CT

series

working temperature

150°C(TJ)

Encapsulation/Housing

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载EFC2K102NUZTDG.pdf

EFC2K102NUZTDG（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32361,Price reference "real-time change" China/Hongkong。 EFC2K102NUZTDG package/specs, Download EFC2K102NUZTDG、Datasheet。