MOSFET 2P-CH 30V 5A 8SOIC FDS4953
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Description:
MOSFET 2P-CH 30V 5A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
FDS4953（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8992,Price reference "real-time change" China/Hongkong。 FDS4953 package/specs, Download FDS4953、Datasheet。
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