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MOSFET 2N-CH EFCP1818 EFC4618R-TR

EFC4618R-TR image
The pictures are for reference only
Brand:
Model:
EFC4618R-TR
Description:
MOSFET 2N-CH EFCP1818
Stock:
16749
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
Contact UsContact Us
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手机icoPhone:+86 19166251823(Wechat)
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    -
  • Drain source voltage (Vdss)
    -
  • FET Type
    2 N-channels(two)
  • FET function
    standard
  • Gate charge (Qg) at different Vgs (maximum)
    -
  • Input capacitance at different Vds (Ciss) (maximum)
    -
  • On resistance (maximum) for different Ids and Vgs
    -
  • Power - maximum
    1.6W
  • Vgs (th) (maximum) for different Ids
    -
  • packing
    TR
  • series
    -
  • working temperature
    150°C(TJ)
  • Encapsulation/Housing
    4-XFBGA,FCBGA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
  • PDFicoDataSheet
    EFC4618R-TR(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16749,Price reference "real-time change" China/Hongkong。 EFC4618R-TR package/specs, Download EFC4618R-TR、Datasheet。
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