MOSFET 2N-CH 30V 13A/18A POWER56 FDMS3668S
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Description:
MOSFET 2N-CH 30V 13A/18A POWER56
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
2 N Channel(two)Asymmetric type
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
FDMS3668S（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28955,Price reference "real-time change" China/Hongkong。 FDMS3668S package/specs, Download FDMS3668S、Datasheet。
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