MOSFET 2N-CH 24V 10A ECH8 ECH8651R-R-TL-H
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Description:
MOSFET 2N-CH 24V 10A ECH8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
ECH8651R-R-TL-H(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31044,Price reference "real-time change" China/Hongkong。 ECH8651R-R-TL-H package/specs, Download ECH8651R-R-TL-H、Datasheet。