EFC6612R-A-TF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

EFC6612R-A-TF

Description:

MOSFET 2N-CH 20V 23A EFCP

Stock:

948

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.07

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

FET Type

2 N Channel(two)Asymmetric type

FET function

Logic level gate,2.5V drive

Gate charge (Qg) at different Vgs (maximum)

27nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

Power - maximum

2.5W

Vgs (th) (maximum) for different Ids

packing

TR,bulk

series

working temperature

Encapsulation/Housing

6-SMD,no feedthrough

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

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EFC6612R-A-TF（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory948,Price reference "real-time change" China/Hongkong。 EFC6612R-A-TF package/specs, Download EFC6612R-A-TF、Datasheet。