MOSFET 2 N-CH 30V 6.3A/8.6A 8SO FDS6982AS_G
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Description:
MOSFET 2 N-CH 30V 6.3A/8.6A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
28 mΩ @ 6.3A,10V,13.5 mΩ @ 8.6A,10V
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
FDS6982AS_G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30775,Price reference "real-time change" China/Hongkong。 FDS6982AS_G package/specs, Download FDS6982AS_G、Datasheet。
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