FDMS3669S-SN00345 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

FDMS3669S-SN00345

Description:

MOSFET 2N-CH 30V

Stock:

12999

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

13A(Ta),24A(Tc),18A(Ta),60A(Tc)

Drain source voltage (Vdss)

30V

FET Type

2 N Channel(two)Asymmetric type

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

24nC @ 10V,34nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1605pF @ 15V,2060pF @ 15V

On resistance (maximum) for different Ids and Vgs

10mΩ @ 13A,10V,5mΩ @ 18A,10V

Power - maximum

1W(Ta),2.2W(Tc),1W(Ta),2.5W(Tc)

Vgs (th) (maximum) for different Ids

2.7V @ 250µA,2.5V @ 1mA

packing

series

PowerTrench®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerTDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

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FDMS3669S-SN00345（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12999,Price reference "real-time change" China/Hongkong。 FDMS3669S-SN00345 package/specs, Download FDMS3669S-SN00345、Datasheet。