MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC FDS6900AS-G
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Description:
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
FDS6900AS-G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16522,Price reference "real-time change" China/Hongkong。 FDS6900AS-G package/specs, Download FDS6900AS-G、Datasheet。
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