MOSFET 2P-CH 15V 1.17A 8-SOIC TPS1120DR
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Description:
MOSFET 2P-CH 15V 1.17A 8-SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
TPS1120DR（FET, MOSFET）ByTIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15885,Price reference "real-time change" China/Hongkong。 TPS1120DR package/specs, Download TPS1120DR、Datasheet。
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