MOSFET 2N-CH 30V 25A 5PTAB CSD87588N
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Description:
MOSFET 2N-CH 30V 25A 5PTAB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
2 N channels(half-bridge)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
CSD87588N（FET, MOSFET）ByTIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11086,Price reference "real-time change" China/Hongkong。 CSD87588N package/specs, Download CSD87588N、Datasheet。
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