CSD88599Q5DCT parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

CSD88599Q5DCT

Description:

MOSFET 2N-CH 60V 22-VSON-CLIP

Stock:

32277

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.98

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

60V

FET Type

2 N channels(half-bridge)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

27nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

4840pF @ 30V

On resistance (maximum) for different Ids and Vgs

2.1 mΩ @ 30A,10V

Power - maximum

12W

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

packing

TR,CT,bulk

series

NexFET™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

22-PowerTFDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

CSD88599Q5DCT（FET, MOSFET）ByTIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32277,Price reference "real-time change" China/Hongkong。 CSD88599Q5DCT package/specs, Download CSD88599Q5DCT、Datasheet。