SSM6P36FE,LM parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Toshiba

Model:

SSM6P36FE,LM

Description:

MOSFET 2P-CH 20V 0.33A ES6

Stock:

29561

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.02

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Parameters

Current at 25 ° C - continuous drain (Id)

330mA

Drain source voltage (Vdss)

20V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

1.2nC @ 4V

Input capacitance at different Vds (Ciss) (maximum)

43pF @ 10V

On resistance (maximum) for different Ids and Vgs

1.31 Ω @ 100mA,4.5V

Power - maximum

150mW

Vgs (th) (maximum) for different Ids

1V @ 1mA

packing

series

working temperature

150°C(TJ)

Encapsulation/Housing

SOT-563,SOT-666

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

SSM6P36FE,LM（FET, MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29561,Price reference "real-time change" China/Hongkong。 SSM6P36FE,LM package/specs, Download SSM6P36FE,LM、Datasheet。