SSM6N7002BFU,LF parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ SSM6N7002BFU,LF

The pictures are for reference only

Brand:

Toshiba

Model:

SSM6N7002BFU,LF

Description:

MOSFET 2N-CH 60V 0.2A US6

Stock:

11270

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

200mA

Drain source voltage (Vdss)

60V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

17pF @ 25V

On resistance (maximum) for different Ids and Vgs

2.1 Ω @ 500mA,10V

Power - maximum

300mW

Vgs (th) (maximum) for different Ids

3.1V @ 250µA

packing

TR,CT

series

working temperature

150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

SSM6N7002BFU,LF（FET, MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11270,Price reference "real-time change" China/Hongkong。 SSM6N7002BFU,LF package/specs, Download SSM6N7002BFU,LF、Datasheet。