MT29E512G08CEHBBJ4-3:B TR parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Micron

Model:

MT29E512G08CEHBBJ4-3:B TR

Description:

IC FLASH 512GBIT PAR 132VBGA

Stock:

11885

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Price：$11.1

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

333 MHz

Memory format

Flash Memory

Memory interface

Paralleling

Memory type

nonvolatile

Voltage - Supply

2.5V ~ 3.6V

packing

series

storage capacity

512Gb(64G x 8)

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

132-VBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

Write cycle time - words, pages

DataSheet

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MT29E512G08CEHBBJ4-3:B TR（NAND FLASH）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11885,Price reference "real-time change" China/Hongkong。 MT29E512G08CEHBBJ4-3:B TR package/specs, Download MT29E512G08CEHBBJ4-3:B TR、Datasheet。