MT29F4T08CTHBBM5-3RES:B TR parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Micron

Model:

MT29F4T08CTHBBM5-3RES:B TR

Description:

IC FLASH 4TB PARALLEL 333MHZ

Stock:

19191

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

333 MHz

Memory format

Flash Memory

Memory interface

Paralleling

Memory type

nonvolatile

Voltage - Supply

2.5V ~ 3.6V

packing

series

storage capacity

4Tb(512G x 8)

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Part status

On sale

Write cycle time - words, pages

DataSheet

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MT29F4T08CTHBBM5-3RES:B TR（NAND FLASH）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19191,Price reference "real-time change" China/Hongkong。 MT29F4T08CTHBBM5-3RES:B TR package/specs, Download MT29F4T08CTHBBM5-3RES:B TR、Datasheet。