MOSFET N-CH 800V 11A TO247 APT11N80BC3G
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Description:
MOSFET N-CH 800V 11A TO247
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT11N80BC3G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63047,Price reference "real-time change" China/Hongkong。 APT11N80BC3G package/specs, Download APT11N80BC3G、Datasheet。