MOSFET N-CH 1200V 29A T-MAX APT28M120B2
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Description:
MOSFET N-CH 1200V 29A T-MAX
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT28M120B2(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17745,Price reference "real-time change" China/Hongkong。 APT28M120B2 package/specs, Download APT28M120B2、Datasheet。