MOSFET N-CH 9V 330MA SOT23-5 LND01K1-G
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Description:
MOSFET N-CH 9V 330MA SOT23-5
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
LND01K1-G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98954,Price reference "real-time change" China/Hongkong。 LND01K1-G package/specs, Download LND01K1-G、Datasheet。