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MOSFET N-CH 500V 13MA SOT23 LND250K1-G

LND250K1-G image
The pictures are for reference only
Brand:
Model:
LND250K1-G
Description:
MOSFET N-CH 500V 13MA SOT23
Stock:
93604
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
Price:$0.1
The market price fluctuates. Please consult the customer service for the actual price
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    13mA(Tj)
  • Drain source voltage (Vdss)
    500 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    0V
  • FET Type
    N channels
  • FET function
    depletion mode
  • Gate charge (Qg) at different Vgs (maximum)
    -
  • Input capacitance at different Vds (Ciss) (maximum)
    10 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    1000 Ω @ 500µA,0V
  • Power dissipation (maximum)
    360mW(Ta)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    -
  • packing
    TR,CT
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    SOT-23(TO-236AB)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • PDFicoDataSheet
    LND250K1-G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93604,Price reference "real-time change" China/Hongkong。 LND250K1-G package/specs, Download LND250K1-G、Datasheet。
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