MOSFET N-CH 100V 200MA SOT23-3 VN2110K1-G
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Description:
MOSFET N-CH 100V 200MA SOT23-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
VN2110K1-G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36540,Price reference "real-time change" China/Hongkong。 VN2110K1-G package/specs, Download VN2110K1-G、Datasheet。