MOSFET N-CH 1000V 8A TO247 APT8M100B
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Description:
MOSFET N-CH 1000V 8A TO247
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT8M100B(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10728,Price reference "real-time change" China/Hongkong。 APT8M100B package/specs, Download APT8M100B、Datasheet。