MOSFET N-CH 600V 106A T-MAX APT106N60B2C6
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Description:
MOSFET N-CH 600V 106A T-MAX
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT106N60B2C6(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31211,Price reference "real-time change" China/Hongkong。 APT106N60B2C6 package/specs, Download APT106N60B2C6、Datasheet。