MOSFET N-CH 1000V 215A SP6 APTM100UM45DAG
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Description:
MOSFET N-CH 1000V 215A SP6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APTM100UM45DAG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19737,Price reference "real-time change" China/Hongkong。 APTM100UM45DAG package/specs, Download APTM100UM45DAG、Datasheet。