MOSFET P-CH 30V 1.1A TO243AA VP3203N8-G
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Description:
MOSFET P-CH 30V 1.1A TO243AA
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
VP3203N8-G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55854,Price reference "real-time change" China/Hongkong。 VP3203N8-G package/specs, Download VP3203N8-G、Datasheet。