MOSFET P-CH 350V 180MA TO92-3 TP2635N3-G
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Description:
MOSFET P-CH 350V 180MA TO92-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TP2635N3-G(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory43689,Price reference "real-time change" China/Hongkong。 TP2635N3-G package/specs, Download TP2635N3-G、Datasheet。