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MOSFET N-CH 1200V 18A ISOTOP APT17F120J

APT17F120J image
The pictures are for reference only
Brand:
Model:
APT17F120J
Description:
MOSFET N-CH 1200V 18A ISOTOP
Stock:
79207
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
Price:$6.23
The market price fluctuates. Please consult the customer service for the actual price
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    18A(Tc)
  • Drain source voltage (Vdss)
    1200 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    300 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    9670 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    580 mΩ @ 14A,10V
  • Power dissipation (maximum)
    545W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    5V @ 2.5mA
  • packing
    pipe
  • series
    POWER MOS 8™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    ISOTOP®
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Base installation
  • Part status
    On sale
  • PDFicoDataSheet
    APT17F120J(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79207,Price reference "real-time change" China/Hongkong。 APT17F120J package/specs, Download APT17F120J、Datasheet。
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