MOSFET N-CH 800V 60A SOT227 APT58M80J
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Description:
MOSFET N-CH 800V 60A SOT227
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT58M80J(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22006,Price reference "real-time change" China/Hongkong。 APT58M80J package/specs, Download APT58M80J、Datasheet。