MOSFET N-CH 1000V 11A D3PAK APT1001RSVRG
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Description:
MOSFET N-CH 1000V 11A D3PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT1001RSVRG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41056,Price reference "real-time change" China/Hongkong。 APT1001RSVRG package/specs, Download APT1001RSVRG、Datasheet。