MOSFET N-CH 1000V 4A D3PAK APT1003RSFLLG
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Description:
MOSFET N-CH 1000V 4A D3PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APT1003RSFLLG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4034,Price reference "real-time change" China/Hongkong。 APT1003RSFLLG package/specs, Download APT1003RSFLLG、Datasheet。