APTC60SKM24T1G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTC60SKM24T1G

Description:

MOSFET N-CH 600V 95A SP1

Stock:

15680

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$13.07

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Parameters

Current at 25 ° C - continuous drain (Id)

95A(Tc)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

300 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

14400 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

24 mΩ @ 47.5A,10V

Power dissipation (maximum)

462W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3.9V @ 5mA

packing

bulk

series

CoolMOS™

technology

MOSFET(Metal oxide)

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP1

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTC60SKM24T1G（MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15680,Price reference "real-time change" China/Hongkong。 APTC60SKM24T1G package/specs, Download APTC60SKM24T1G、Datasheet。