MOSFET N-CH 500V 335A SP6 APTM50UM13SAG
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Description:
MOSFET N-CH 500V 335A SP6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APTM50UM13SAG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84068,Price reference "real-time change" China/Hongkong。 APTM50UM13SAG package/specs, Download APTM50UM13SAG、Datasheet。