MOSFET N-CH 100V 860A SP6 APTM10UM01FAG
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Description:
MOSFET N-CH 100V 860A SP6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APTM10UM01FAG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23575,Price reference "real-time change" China/Hongkong。 APTM10UM01FAG package/specs, Download APTM10UM01FAG、Datasheet。