APTM120UM70DAG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTM120UM70DAG

Description:

MOSFET N-CH 1200V 171A SP6

Stock:

83088

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$76.45

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

171A(Tc)

Drain source voltage (Vdss)

1200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

1650 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

43500 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

80 mΩ @ 85.5A,10V

Power dissipation (maximum)

5000W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 30mA

packing

bulk

series

technology

MOSFET(Metal oxide)

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP6

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTM120UM70DAG（MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83088,Price reference "real-time change" China/Hongkong。 APTM120UM70DAG package/specs, Download APTM120UM70DAG、Datasheet。