MOSFET N-CH 1200V 116A SP6 APTM120U10SCAVG
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Description:
MOSFET N-CH 1200V 116A SP6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APTM120U10SCAVG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97446,Price reference "real-time change" China/Hongkong。 APTM120U10SCAVG package/specs, Download APTM120U10SCAVG、Datasheet。