MOSFET N-CH 1000V 215A SP6 APTM100UM45FAG
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Description:
MOSFET N-CH 1000V 215A SP6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
APTM100UM45FAG(MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22029,Price reference "real-time change" China/Hongkong。 APTM100UM45FAG package/specs, Download APTM100UM45FAG、Datasheet。