MSC180SMA120SA parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

MSC180SMA120SA

Description:

MOSFET SIC 1200 V 180 MOHM TO-26

Stock:

87223

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：13794459602(Wechat)

Q Q：3469113929

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Parameters

Current at 25 ° C - continuous drain (Id)

21A(Tc)

Drain source voltage (Vdss)

1200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

20V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

34 nC @ 20 V

Input capacitance at different Vds (Ciss) (maximum)

510 pF @ 1000 V

On resistance (maximum) for different Ids and Vgs

225 mΩ @ 8A,20V

Power dissipation (maximum)

125W(Tc)

Vgs (max)

+23V,-10V

Vgs (th) (maximum) for different Ids

3.26V @ 500µA

packing

pipe

series

technology

SiC(Silicon carbide bonded crystal tube)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Part status

On sale

DataSheet

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MSC180SMA120SA（MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87223,Price reference "real-time change" China/Hongkong。 MSC180SMA120SA package/specs, Download MSC180SMA120SA、Datasheet。