MOSFET N-CH 600V 29A D2PAK STB36NM60ND
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Description:
MOSFET N-CH 600V 29A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, FDmesh™ II
DataSheet
STB36NM60ND(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84909,Price reference "real-time change" China/Hongkong。 STB36NM60ND package/specs, Download STB36NM60ND、Datasheet。