SICFET N-CH 1200V 20A HIP247 SCT20N120
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Description:
SICFET N-CH 1200V 20A HIP247
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SCT20N120(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79320,Price reference "real-time change" China/Hongkong。 SCT20N120 package/specs, Download SCT20N120、Datasheet。