MOSFET N-CH 650V 7A DPAK STD8N65M5
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Description:
MOSFET N-CH 650V 7A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STD8N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14405,Price reference "real-time change" China/Hongkong。 STD8N65M5 package/specs, Download STD8N65M5、Datasheet。