MOSFET N-CH 650V 12A TO220-3 STP16N65M5
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Description:
MOSFET N-CH 650V 12A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STP16N65M5(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25829,Price reference "real-time change" China/Hongkong。 STP16N65M5 package/specs, Download STP16N65M5、Datasheet。