MOSFET N-CH 600V 5A IPAK STU7N60M2
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Description:
MOSFET N-CH 600V 5A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU7N60M2(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74382,Price reference "real-time change" China/Hongkong。 STU7N60M2 package/specs, Download STU7N60M2、Datasheet。