MOSFET N-CH 30V 10A DPAK STD19N3LLH6AG
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Description:
MOSFET N-CH 30V 10A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, STripFET™
DataSheet
STD19N3LLH6AG(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41956,Price reference "real-time change" China/Hongkong。 STD19N3LLH6AG package/specs, Download STD19N3LLH6AG、Datasheet。