MOSFET N-CH 620V 5.5A I2PAK STI6N62K3
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Description:
MOSFET N-CH 620V 5.5A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STI6N62K3(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65657,Price reference "real-time change" China/Hongkong。 STI6N62K3 package/specs, Download STI6N62K3、Datasheet。