MOSFET N-CH 40V 80A TO251 STU80N4F6
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Description:
MOSFET N-CH 40V 80A TO251
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STU80N4F6(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19238,Price reference "real-time change" China/Hongkong。 STU80N4F6 package/specs, Download STU80N4F6、Datasheet。